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The insulator to metal transition in LaTiO_3 induced by La substitution viaSr is studied within multi-band exact diagonalization dynamical mean fieldtheory at finite temperatures. It is shown that weak hole doping triggers alarge interorbital charge transfer, with simultaneous electron and hole dopingof t2g subbands. The transition is first-order and exhibits phase separationbetween insulator and metal. In the metallic phase, subband compressibilitiesbecome very large and have opposite signs. Electron doping gives rise to aninterorbital charge flow in the same direction as hole doping. These resultscan be understood in terms of a strong orbital depolarization.

Doping-driven Mott transition in La_{1-x}Sr_xTiO_3 via simultaneous electron and hole doping of t2g subbands