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Low-energy electron microscopy (LEEM) was used to measure the reflectivity oflow-energy electrons from graphitized SiC(0001). The reflectivity showsdistinct quantized oscillations as a function of the electron energy andgraphite thickness. Conduction bands in thin graphite films form discreteenergy levels whose wave vectors are normal to the surface. Resonance of theincident electrons with these quantized conduction band states enhanceselectrons to transmit through the film into the SiC substrate, resulting indips in the reflectivity. The dip positions are well explained usingtight-binding and first-principles calculations. The graphite thicknessdistribution can be determined microscopically from LEEM reflectivitymeasurements.

Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons