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Exotic features of a metal/oxide/metal (MOM) sandwich, which will be thebasis for a drastically innovative nonvolatile memory device, is brought tolight from a physical point of view. Here the insulator is one of theubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3,NiO, and CoO. The sandwich exhibits a resistance that reversibly switchesbetween two states: one is a highly resistive off-state and the other is aconductive on-state. Several distinct features were universally observed inthese binary TMO sandwiches: namely, nonpolar switching, non-volatile thresholdswitching, and current--voltage duality. From the systematic sample-sizedependence of the resistance in on- and off-states, we conclude that theresistance switching is due to the homogeneous/inhomogeneous transition of thecurrent distribution at the interface.

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution