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Mechanical properties, atomic and energy band structures of bare and hydrogenpassivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated byusing first-principles pseudopotential plane wave method. Undoped, tetrahedralSi and Ge nanowire segments join pseudomorphically and can form superlatticewith atomically sharp interface. We found that Si$_{n}$ nanowires are stifferthan Ge$_{n}$ nanowires. Hydrogen passivation makes these nanowires andSi$_{n}$Ge$_{n}$ nanowire superlattice even more stiff. Upon heterostructureformation, superlattice electronic states form subbands in momentum space. Bandlineups of Si and Ge zones result in multiple quantum wells, where specificstates at the band edges and in band continua are confined. The electronicstructure of the nanowire superlattice depends on the length and cross sectiongeometry of constituent Si and Ge segments. Since bare Si and Ge nanowires aremetallic and the band gaps of hydrogenated ones varies with the diameter,Si$_{n}$Ge$_{n}$ superlattices offer numerous alternatives for multiple quantumwell devices with their leads made from the constituent metallic nanowires.

Confined states in multiple quantum well structures of Si$_{n}$Ge$_{n}$ nanowire superlattices