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We propose a model for magnetic noise based on spin-flips (notelectron-trapping) of paramagnetic dangling-bonds at theamorphous-semiconductor/oxide interface. A wide distribution of spin-flip timesis derived from the single-phonon cross-relaxation mechanism for adangling-bond interacting with the tunneling two-level systems of the amorphousinterface. The temperature and frequency dependence is sensitive to threeenergy scales: The dangling-bond spin Zeeman energy delta, as well as theminimum (E_min) and maximum (E_max) values for the energy splittings of thetunneling two-level systems. We compare and fit our model parameters to arecent experiment probing spin coherence of antimony donors implanted innuclear-spin-free silicon [T. Schenkel {\it et al.}, Appl. Phys. Lett. 88,112101 (2006)], and conclude that a dangling-bond area density of the order of10^{14}cm^{-2} is consistent with the data. This enables the prediction ofsingle spin qubit coherence times as a function of the distance from theinterface and the dangling-bond area density in a real device structure. Weapply our theory to calculations of magnetic flux noise affecting SQUID devicesdue to their Si/SiO_2 substrate. Our explicit estimates of flux noise in SQUIDslead to a noise spectral density of the order of 10^{-12}Phi_{0}^{2} {Hz}^{-1}at f=1Hz. This value might explain the origin of flux noise in some SQUIDdevices. Finally, we consider the suppression of these effects using surfacepassivation with hydrogen, and the residual nuclear-spin noise resulting from aperfect silicon-hydride surface.

Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory