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We calculate the exchange coupling J between electrons in a double-wellpotential in a two-dimensional semiconductor environment within theHeitler-London (HL) approach. Two functional forms are considered for thedouble-well potential. We show that by choosing an appropriate and relativelysimple single-electron variational wave function it is possible, within the HLapproach, to significantly improve the estimates for J. In all cases thepresent scheme overcomes the artifacts and limitations at short interdotdistances, previously attributed to the HL method, where unphysical tripletground states have been found, and leads to an overall agreement with analyticinterpolated expressions for J obtained for a donor-type model potential.

Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures