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We have performed four-probe electrical transport measurements on solitaryhighly crystalline wires of semimetallic bismuth with aspect ratios up to 60 atroom and at cryogenic temperatures. By proper choice of the substrate materialand the film deposition parameters, lithographic wires with lateral dimensionsof down to one single grain, $\sim 250$ nm, were fabricated. The electricalresistance of each wire was measured against its thickness through successivereactive ion etching of the self-same wire. Quantum size effects revealedthemselves as regular oscillations in the electrical resistance. Some evidencefor the semimetal-to-semiconductor phase transition has been detected. Themeasured data are discussed within the framework of the existing theoreticalmodels.

Quantum size effects in solitary wires of bismuth