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We have used polarized neutron reflectometry to study the structural andmagnetic properties of the individual layers in a series of(Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, weobserve that the samples are virtually identical except for the GaAs spacerthickness (which varies from 3-12 nm), and confirm that the spacers containlittle or no Mn. Magnetically, we observe that for the sample with the thickestspacer layer, modulation doping by the(Al,Be,Ga)As results in (Ga,Mn)As layerswith very different temperature dependent magnetizations. However, as thespacer layer thickness is reduced, the temperature dependent magnetizations ofthe top an bottom (Ga,Mn)As layers become progressively more similar - a trendwe find to be independent of the crystallographic direction along which spinsare magnetized. These results definitively show that (Ga,Mn)As layers cancouple across a non-magnetic spacer, and that such coupling depends on spacerthickness.

Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer