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The magnetotransport in a set of identical parallel AlGaN/GaN quantum wirestructures was investigated. The width of the wires was ranging between 1110 nmand 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations areobserved. We find that the electron concentration and mobility is approximatelythe same for all wires, confirming that the electron gas in the AlGaN/GaNheterostructure is not deteriorated by the fabrication procedure of the wirestructures. For the wider quantum wires the weak antilocalization effect isclearly observed, indicating the presence of spin-orbit coupling. For narrowquantum wires with an effective electrical width below 250 nm the weakantilocalization effect is suppressed. By comparing the experimental data to atheoretical model for quasi one-dimensional structures we come to theconclusion that the spin-orbit scattering length is enhanced in narrow wires.

Enhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires