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We report on a healing of defects at room temperature in the organicsemiconductor pentacene. This peculiar effect is a direct consequence of theweak intermolecular interaction which is characteristic of organicsemiconductors. Pentacene thin-film transistors were fabricated andcharacterized by in situ gated four-terminal measurements. Under high vacuumconditions (base pressure of order 10E-8 mbar), the device performance is foundto improve with time. The effective field-effect mobility increases by as muchas a factor of two and mobilities up to 0.45 cm2/Vs were achieved. In addition,the contact resistance decreases by more than an order of magnitude and thereis a significant reduction in current hysteresis. Oxygen/nitrogen exposure andannealing experiments show the improvement of the electronic parameters to bedriven by a thermally promoted process and not by chemical doping. In order toextract the spectral density of trap states from the transistorcharacteristics, we have implemented a powerful scheme which allows for acalculation of the trap densities with high accuracy in a straightforwardfashion. We show the performance improvement to be due to a reduction in thedensity of shallow traps <0.15 eV from the valence band edge, while theenergetically deeper traps are essentially unaffected. This work contributes toan understanding of the shallow traps in organic semiconductors and identifiesstructural point defects within the grains of the polycrystalline thin films asa major cause.

Defect healing at room temperature in pentacene thin films and improved transistor performance