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The frequency dependence of microwave-induced resistance oscillations (MIROs)has been studied experimentally in high-mobility electron GaAs/AlGaAsstructures to explore the limits at which these oscillations can be observed.It is found that in dc transport experiments at frequencies above 120 GHz,MIROs start to quench, while above 230 GHz, they completely disappear. Theresults will need to be understood theoretically but are qualitativelydiscussed within a model in which forced electronic charge oscillations(plasmons) play an intermediate role in the interaction process between theradiation and the single-particle electron excitations between Landau levels.Comment: final version: total 13 pages including 6 figures (6 pages in journal  format

Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas