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Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we haveexperimentally studied the photoresistance/photovoltaic oscillations induced bymicrowave irradiation in the regime where both 1/B and B-periodic oscillationscan be observed. In the frequency range between 27 and 130 GHz we found thatthese two types of oscillations are decoupled from each other, consistent withthe respective models that 1/B oscillations occur in bulk while theB-oscillations occur along the edges of the Hall bars. In contrast to theoriginal report of this phenomenon (Ref. 1) the periodicity of theB-oscillations in our samples are found to be independent of L, the length ofthe Hall bar section between voltage measuring leads.

Photovoltaic Oscillations Due to Edge-Magnetoplasmon Modes in a Very-High Mobility 2D Electron Gas