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We investigate the conductance of normal-conductor/graphene/normal-conductor(NGN) junctions for arbitrary on-site potentials in the normal and graphiticparts of the system. We find that a ballistic NGN junction can displayinsulating behavior even when the charge-carrier density in the graphene partis finite. This effect originates in the different k intervals supportingpropagating modes in graphene and a normal conductor, and persists for moderatelevels of bulk, edge, or interface disorder. The ensuing conductance thresholdscould be used as an electronic tool to map out details of the graphene bandstructure in absolute k space.

physical review. b, condensed matter and materials physics

Electronic transport in normal-conductor/graphene/normal-conductor  junctions and conditions for insulating behavior at a finite charge-carrier  density