English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We demonstrate an electrostatic trap for indirect excitons in a field-effectstructure based on coupled GaAs quantum wells. Within the plane of a doublequantum well indirect excitons are trapped at the perimeter of a SiO2 areasandwiched between the surface of the GaAs heterostructure and asemitransparent metallic top gate. The trapping mechanism is well explained bya combination of the quantum confined Stark effect and local field enhancement.We find the one-dimensional trapping potentials in the quantum well plane to benearly harmonic with high spring constants exceeding 10 keV/cm^2.

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells