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The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) arestud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded byH. As, P, B and Al profiles were formed by multiple energy ion implantationover a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed inair over the temperature range 460-660 oC and the rate of interface motion wasmonitored us- ing time resolved reflectivity. The dopant-enhanced SPE rateswere modeled with the generalized Fermi level shifting model using degeneratesemiconductor statis- tics. The effect of band bending between the crystallineand amorphous sides of the interface is also considered.

Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers