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We investigate electronic transport properties of Schottky-barrierfield-effect transistors (FET) based on double-walled carbon nanotubes (DWNT)with a semiconducting outer shell and a metallic inner one. These kind ofDWNT-FET show asymmetries of the $I$-$V$ characteristics and threshold voltagesdue to the electron-hole asymmetry of the Schottky barrier. The presence of themetallic inner shell induces a large effective band gap, which is one order ofmagnitude larger than that due to the semiconducting shell alone of asingle-walled carbon nanotube FET.Comment: 4 pages, 3 figures. Published for

Schottky-barrier double-walled carbon-nanotube field-effect transistors