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The Zeeman splitting and the underlying value of the g-factor for conductionband electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured byspin-beat spectroscopy based on a time-resolved Kerr rotation technique. Theexperimental data are in good agreement with theoretical predictions. The modelaccurately accounts for the large electron energies above the GaAs conductionband bottom, resulting from the strong quantum confinement. In the trackedrange of optical transition energies E from 1.52 to 2.0eV, the electrong-factor along the growth axis follows closely the universal dependenceg_||(E)= -0.445 + 3.38(E-1.519)-2.21(E-1.519)^2 (with E measured in eV); andthis universality also embraces Al_xGa_{1-x}As alloys. The in-plane g-factorcomponent deviates notably from the universal curve, with the degree ofdeviation controlled by the structural anisotropy.Comment: 8 pages, 6 figure

physical review. b, condensed matter and materials physics

Universal behavior of the electron<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>factor in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml…

Universal behavior of the electrongfactor inGaAs∕AlxGa1−