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The density of trap states in the bandgap of semiconducting organic singlecrystals has been measured quantitatively and with high energy resolution bymeans of the experimental method of temperature-dependentspace-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has beenapplied to study bulk rubrene single crystals, which are shown by thistechnique to be of high chemical and structural quality. A density of deep trapstates as low as ~ 10^{15} cm^{-3} is measured in the purest crystals, and theexponentially varying shallow trap density near the band edge could beidentified (1 decade in the density of states per ~25 meV). Furthermore, wehave induced and spectroscopically identified an oxygen related sharp hole bulktrap state at 0.27 eV above the valence band.

Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene