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MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Twooptions of initiating the crystal growth were applied: (a) a regular MBEprocedure (manganese and arsenic were delivered simultaneously) and (b)subsequent deposition of manganese and arsenic layers. It was shown thatspontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$cm$^{-2}$ and $2.5\cdot 10^{11}$ cm$^{-2}$, respectively (as observed by AFM),occurred for the layer thickness higher than 5 ML. Electronic structure of theMnAs/GaN systems was studied by resonant photoemission spectroscopy. That ledto determination of the Mn 3d - related contribution to the total density ofstates (DOS) distribution of MnAs. It has been proven that the electronicstructures of the MnAs dots grown by the two procedures differ markedly. Onecorresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar tothat reported for half-metallic zinc-blende MnAs. Both system behavesuperparamagnetically (as revealed by magnetization measurements), but withboth the blocking temperatures and the intra-dot Curie temperaturessubstantially different. The intra-dot Curie temperature is about 260 K for theformer system while markedly higher than room temperature for the latter one.Relations between growth process, electronic structure and other properties ofthe studied systems are discussed. Possible mechanisms of half-metallic MnAsformation on GaN are considered.Comment: 20+ pages, 8 figure

physical review. b, condensed matter and materials physics

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>MnAs</mml:mi></mml:mrow></mml:math>dots grown on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaN</mml:mi><mml:mo>(</mml:mo><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo stretchy="false">¯</mml:mo></mml:mover><mml:mo>)</mml:mo><mml:mtext>−</mml:mtext><mml:mo>(</mml:mo><mml:mn>1</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</…

MnAsdots grown onGaN(0001¯)−(1×1)