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We use ab initio density functional calculations to study the effect ofelectron and hole doping on the equilibrium geometry and electronic structureof C, Si, and S monatomic wires. Independent of doping, all these nanowires arefound to be metallic. In absence of doping, C wires are straight, whereas Siand S wires display a zigzag structure. Besides two preferred bond angles of 60deg and 120 deg in Si wires, we find an additional metastable bond angle of 90deg in S wires. The equilibrium geometry and electronic structure of thesenanowires is shown to change drastically upon electron and hole doping.Comment: 5 pages including 5 figure

Effect of electron and hole doping on the structure of C, Si, and S nanowires