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We report on the resonant tunneling effect and the increase of tunnelingmagnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAsquantum-well heterostructures. The observed quantum levels of the GaMnAsquantum well were successfully explained by the valence-band kp model with thep-d exchange interaction. It was also found that the Fermi level of theelectrode injecting carriers is important to observe resonant tunneling in thissystem

Quantum size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures