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We analyze several important issues for the single- and two-qubit operationsin Si quantum computer architectures involving P donors close to a SiO2interface. For a single donor, we investigate the donor-bound electronmanipulation (i.e. 1-qubit operation) between the donor and the interface byelectric and magnetic fields. We establish conditions to keep a donor-boundstate at the interface in the absence of local surface gates, and estimate themaximum planar density of donors allowed to avoid the formation of a2-dimensional electron gas at the interface. We also calculate the timesinvolved in single electron shuttling between the donor and the interface. Fora donor pair, we find that under certain conditions the exchange coupling (i.e.2-qubit operation) between the respective electron pair at the interface may beof the same order of magnitude as the coupling in GaAs-based two-electrondouble quantum dots where coherent spin manipulation and control has beenrecently demonstrated (for example for donors ~10 nm below the interface and\~40 nm apart, J~10^{-4} meV), opening the perspective for similar experimentsto be performed in Si.Comment: 11 pages, 15 figures. Changes in Eq. 24 plus minor typo

physical review. b, condensed matter and materials physics

External field control of donor electron exchange at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>interface

External field control of donor electron exchange at theSi∕SiO2interface