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The impact of free charges on the local pressure on a charged ferroelectricdomain wall produced by an electric field has been analyzed. A general formulafor the local pressure on a charged domain wall is derived considering full orpartial compensation of bound polarization charges by free charges. It is shownthat the compensation can lead to a very strong reduction of the pressureimposed on the wall from the electric field. In some cases this pressure can begoverned by small nonlinear effects. It is concluded that the free chargecompensation of bound polarization charges can lead to substantial reduction ofthe domain wall mobility even in the case when the mobility of free chargecarriers is high. This mobility reduction gives rise to an additional imprintmechanism which may play essential role in switching properties offerroelectric materials. The effect of the pressure reduction on thecompensated charged domain walls is illustrated for the case of 180-degreeferroelectric domain walls and of 90-degree ferroelectric domain walls with thehead-to-head configuration of the spontaneous polarization vectors.Comment: subm. to PRB. This verion is extended by appendi

Pressure on charged domain walls and additional imprint mechanism in ferroelectrics