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A model of coherent tunneling, which combines multi-orbital tight-bindingapproximation with Landauer-B\"uttiker formalism, is developed and applied toall-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. Acomparison of theoretical predictions and experimental results onspin-dependent Zener tunneling, tunneling magnetoresistance (TMR), andanisotropic magnetoresistance (TAMR) is presented. The dependence of spincurrent on carrier density, magnetization orientation, strain, voltage bias,and spacer thickness is examined theoretically in order to optimize devicedesign and performance.Comment: 9 pages, 13 figures, submitted to PR

Spin-dependent tunneling in modulated structures of (Ga,Mn)As