English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The valley splitting of the first few Landau levels is calculated as afunction of the magnetic field for electrons confined in a strained siliconquantum well grown on a tilted SiGe substrate, using a parameterizedtight-binding method. For a zero substrate tilt angle, the valley splittingslightly decreases with increasing magnetic field. In contrast, the valleysplitting for a finite substrate tilt angle exhibits a strong andnon-monotonous dependence on the magnetic field strength. The valley splittingof the first Landau level shows an exponential increase followed by a slowsaturation as the magnetic field strength increases. The valley splitting ofthe second and third Landau levels shows an oscillatory behavior. Thenon-monotonous dependence is explained by the phase variation of the Landaulevel wave function along the washboard-like interface between the tiltedquantum well and the buffer material. The phase variation is the directconsequence of the misorientation between the crystal axis and the confinementdirection of the quantum well. This result suggests that the magnitude of thevalley splitting can be tuned by controlling the Landau-level filling factorthrough the magnetic field and the doping concentration

Magnetic-field dependence of valley splitting in Si quantum wells grown on tilted SiGe substrates