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Magnetic p-n junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving electrons from a ferromagnetic injector (Fe), into a bulk semiconductor (n-GaAs) via Schottky contact. For detection, a diluted magnetic semiconductor (p-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the p-n junction

physical review. b, condensed matter and materials physics

All electrical measurement of spin injection in a magnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>p</mml:mi><mml:mtext>−</mml:mtext><mml:mi>n</mml:mi></mml:mrow></mml:math>junction diode

All electrical measurement of spin injection in a magneticp−njunction diode