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The Monte Carlo technique is used to calculate electrical as well asthermoelectric transport properties across thin film heterostructures. We studya thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, whenthe barrier thickness is in 50nm-2000nm range. We found that with decreasingsize, the effective Seebeck coefficient is increased substantially. Thetransition between pure ballistic thermionic transport and fully diffusivethermoelectric transport is also described

Thermoelectric transport perpendicular to thin-film heterostructures calculated using the Monte Carlo technique