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We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Comagnetic tunnel junctions deposited on step-bunched Si substrates usingmagneto-optical Kerr effect and time-resolved x-ray photoelectron emissionmicroscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM).Different reversal mechanisms have been found depending on the substrate miscutangle. Larger terraces (smaller miscut angles) lead to a higher nucleationdensity and stronger domain wall pinning. The width of domain walls withrespect to the size of the terraces seems to play an important role in thereversal. We used the element selectivity of XMCD-PEEM to reveal the stronginfluence of the stray field of domain walls in the hard magnetic layer on themagnetic switching of the soft magnetic layer.Comment: 8 Pages, 7 Figure

physical review. b, condensed matter and materials physics

Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi><mml:mi mathvariant="normal">Ni</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Co</mml:mi></mml:…

Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer inFeNi∕Al2O3∕Co