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Si p-type 100 samples were coimplanted at room temperature with He+ ions at 30 keV with a dose of 11016 ions/cm2 and successively with H+ ions at 24 keV with a dose of 11016 ions/cm2. A series ofsamples was thermally treated for 2 h from 100 to 900 °C at 100 °C steps to study the evolution of pointlikeand extended defects by two complementary techniques: positron Doppler broadening spectroscopy and transmissionelectron microscopy. Depth profiling the samples with a positron beam led to the identification of fivedifferent traps and the evolution of their profile distributions with thermal treatments. The positron traps wereidentified as decorated vacancy clusters of different sizes. Their decoration by implanted ions and in some caseby oxygen was probed by coincidence Doppler broadening spectroscopy. Up to 300 °C annealing temperaturepositrons probe three distributions of different decorated defects covering regions of the sample down to400–450 nm. Starting from 300 °C annealing temperature no defects were revealed by positrons in the regionnext to the peak of the implanted ions distributions positioned around 280 nm, where extended defects areexpected; this indicates complete filling of the defects by H and He. From 300 to 600 °C decorated vacancyclusters of different sizes appear progressively in the region below 280 nm, with a distribution moving deeperinto the sample. Comparison with previous measurements on He-implanted samples points out the chemicalaction of H. Hydrogen atoms interact with the previous damage by He, producing more stabilized vacancylikedefects distributed through the damage region of the sample. Electron microscopy shows the transformation ofthe extended defects from platelets to blisters and cavities

Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments