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A possible explanation is given for the anomalous $T^{3/2}$ temperaturedependence of the electrical resistivity of MnSi, which is observed in thehigh-pressure paramagnetic state. The unusual Fermi surface of MnSi includeslarge open sheets that intersect along the faces of the cubic Brillouin zone.Close to these intersections, long-wavelength interband magnetic spinfluctuations can scatter electrons from one sheet to the other. The currentrelaxation rate due to such interband scattering events is not reduced byvertex corrections as is that for scattering from intraband ferromagneticfluctuations. Consequently, current relaxation proceeds in a manner similar tothat occurring in nearly antiferromagnetic metals, in which low-temperature$T^{3/2}$ behavior is well known. It is argued that this type ofnon-Fermi-liquid behavior can, for a metal with ferromagnetic fluctuations nearFermi sheet intersections, persist over a much wider temperature range than itdoes in nearly antiferromagnetic metals.Comment: 4 pages, 1 figur

physical review. b, condensed matter and materials physics

Small-angle interband scattering as the origin of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi>T</mml:mi><mml:mrow><mml:mn>3</mml:mn><mml:mo>∕</mml:mo><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:math>resistivity in MnSi

Small-angle interband scattering as the origin of theT3∕2resistivity in MnSi