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The geometrical and electronic structure properties of $<100>$ and $<110>$silicon nanowires in the absence of surface passivation are studied by means ofdensity-functional calculations. As we have shown in a recent publication [R.Rurali and N. Lorente, Phys. Rev. Lett. {\bf 94}, 026805 (2005)] thereconstruction of facets can give rise to surface metallic states. In thiswork, we analyze the dependence of geometric and electronic structure featureson the size of the wire and on the growth direction

physical review. b, condensed matter and materials physics

Size effects in surface-reconstructed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>⟨</mml:mo><mml:mn>100</mml:mn><mml:mo>⟩</mml:mo></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>⟨</mml:mo><mml:mn>110</mml:mn><mml:mo>⟩</mml:mo></mml:math>silicon nanowires

Size effects in surface-reconstructed⟨100⟩and⟨110⟩silicon nanowires