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We calculate the distribution of the conductance G in a one-dimensionaldisordered wire at finite temperature T and bias voltage V in aindependent-electron picture and assuming full coherent transport. At highenough temperature and bias voltage, where several resonances of the systemcontribute to the conductance, the distribution P(G(T,V)) can be representedwith good accuracy by autoconvolutions of the distribution of the conductanceat zero temperature and zero bias voltage. The number of convolutions dependson T and V. In the regime of very low T and V, where only one resonance isrelevant to G(T,V), the conductance distribution is analyzed by a resonanttunneling conductance model. Strong effects of finite T and V on theconductance distribution are observed and well described by our theoreticalanalysis, as we verify by performing a number of numerical simulations of aone-dimensional disordered wire at different temperatures, voltages, andlengths of the wire. Analytical estimates for the first moments of P(G(T,V)) athigh temperature and bias voltage are also provided.Comment: 9 pages, 7 figures, Submitted to PR

Conductance distributions of one-dimensional disordered wires at finite temperature and bias voltage