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We have investigated InGaAs layers grown by molecular-beam epitaxy onGaAs(001) by transmission electron microscopy (TEM) and photoluminescencespectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % andrespective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. Theparameters were chosen to grow layers slightly above and below the transitionbetween the two- and three-dimensional growth mode. In-concentration profileswere obtained from high-resolution TEM images by composition evaluation bylattice fringe analysis. The measured profiles can be well described applyingthe segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557].Calculated photoluminescence peak positions on the basis of the measuredconcentration profiles are in good agreement with the experimental ones.Evaluating experimental In-concentration profiles it is found that thetransition from the two-dimensional to the three-dimensional growth mode occursif the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers.The measured exponential decrease of the In-concentration within the cap layeron top of the islands reveals that the In-floating layer is not consumed duringisland formation. The segregation efficiency above the islands is increasedcompared to the quantum wells which is explained tentatively bystrain-dependent lattice-site selection of In. In addition, In0.25Ga0.75Asquantum wells were grown at different temperatures between 500 oC and 550 oC.The evaluation of concentration profiles shows that the segregation efficiencyincreases from R=0.65 to R=0.83.Comment: 16 pages, 6 figures, 1 table, sbmitted in Phys. Rev.

physical review. b, condensed matter and materials physics

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>In</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi>As</mml:mi></mml:mrow></mml:math>

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation inInxGa1−xAs