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We calculate the P-shell--to-S-shell decay lifetime \tau(P->S) of electronsin lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-holescattering within an atomistic pseudopotential-based approach. We find thatthis relaxation mechanism leads to fast decay of \tau(P->S)~1-7 ps for dots ofdifferent sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes\tau(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long asholes are present there is no need for an alternative polaron mechanism.Comment: Version published in Phys. Rev.

physical review. b, condensed matter and materials physics

Carrier relaxation mechanisms in self-assembled<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">In</mml:mi><mml:mo>,</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>quantum dots: Efficient<mml:math xmlns:mml="http://…

Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: Efficient