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We show that $1/f$-noise in the variable range hopping regime is related totransitions of many-electrons clusters (fluctuators) between two almostdegenerate states. Giant fluctuation times necessary for $1/f$-noise areprovided by slow rate of simultaneous tunneling of many localized electrons andby large activation barriers for their consecutive rearrangements. The Hoogeconstant steeply grows with decreasing temperature because it is easier to finda slow fluctuator at lower temperatures. Our conclusions qualitatively agreewith the low temperature observations of $1/f$-noise in p-type silicon andGaAs

physical review. b, condensed matter and materials physics

Many electron theory of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>1</mml:mn><mml:mo>∕</mml:mo><mml:mi>f</mml:mi></mml:mrow></mml:math>noise in hopping conductivity

Many electron theory of1∕fnoise in hopping conductivity