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We report experimental evidence of excitonic spin-splitting, in addition tothe conventional Zeeman effect, produced by a combination of the Rashbaspin-orbit interaction, Stark shift and charge screening. Theelectric-field-induced modulation of the spin-splitting are studied during thecharging and discharging processes of p-type GaAs/AlAs double barrier resonanttunneling diodes (RTD) under applied bias and magnetic field. The abruptchanges in the photoluminescence, with the applied bias, provide information ofthe charge accumulation effects on the device.Comment: 4 pages, 2 figure

Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices