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The gate-controlled electron spin interference was observed innanolithographically defined square loop (SL) arrays fabricated usingIn$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$Asquantum wells. In this experiment, we demonstrate electron spin precession inquasi-one-dimensional channels that is caused by the Rashba effect. It turnedout that the spin precession angle $\theta$ was gate-controllable by more than0.75$\pi$ for a sample with $L=1.5\mu$m, where $L$ is the side length of theSL. Large controllability of $\theta$ by the applied gate voltage as such is anecessary requirement for the realization of the spin FET device proposed byDatta and Das [Datta {\it et. al.}, Appl. Phys. Lett. {\bf 56}, 665 (1990)] aswell as for the manipulation of spin qubits using the Rashba effect.Comment: 4pages, 4figures, submitted to Phys. Rev. Let

Experimental realization of a ballistic spin interferometer based on the Rashba effect using a nanolithographically defined square loop array