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We present low temperature magnetoconductivity measurements of adensity-tunable and high mobility two-dimensional electron gas confined in thewide bandgap GaN/AlGaN system. We observed pronounced anti-localization minimain the low-field conductivity, indicating the presence of strong spin-orbitcoupling. Density dependent measurements of magnetoconductivity indicate thatthe coupling is mainly due to the Bychkov-Rashba mechanism. In addition, wehave derived a closed-form expression for the magnetoconductivity, allowing usto extract reliable transport parameters for our devices. The Rashba spin-orbitcoupling constant is $\alpha_{so}$ $\sim$ 6$\times$ 10$^{-13}$eVm, while theconduction band spin-orbit splitting energy amounts to $\Delta_{so}$ $\sim$0.3meV at n$_e$=1$\times10^{16}$m$^{-2}$.Comment: Accepted for publication in PR

physical review. b, condensed matter and materials physics

Large Bychkov-Rashba spin-orbit coupling in high-mobility<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:…

Large Bychkov-Rashba spin-orbit coupling in high-mobilityGaN∕AlxGa1−xN