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It has been recently shown that the memory of multiple aging stages, aphenomenon considered possible only below the glass transition of some glassysystems, appears also above that temperature range in the relaxor ferroelectric(Pb/La)(Zr/Ti)O_3 (PLZT). Doubts exist whether memory at such high temperatureis intrinsic of the glassy relaxor state or is rather due to migration ofmobile defects. It is shown that the memory in the electric susceptibility andelastic compliance of PLZT 9/65/35 is not enhanced but depressed by mobiledefects like O vacancies, H defects and mobile charges resulting from theirionization. In addition, memory is drastically reduced at La contents slightlybelow the relaxor region of the phase diagram, unless aging is protracted forlong times (months at room temperature). This is considered as evidence that inthe non relaxor case memory is indeed due to slow migration of defects, whilein the La rich case it is intrinsic of the relaxor state, even above thetemperature of the susceptibility maximum.Comment: 9 pages, 8 figures, submitted to Phys. Rev.

physical review. b, condensed matter and materials physics

High-temperature memory in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>(</mml:mo><mml:mi>Pb</mml:mi><mml:mo>∕</mml:mo><mml:mi>La</mml:mi><mml:mo>)</mml:mo><mml:mo>(</mml:mo><mml:mi>Zr</mml:mi><mml:mo>∕</mml:mo><mml:mi>Ti</mml:mi><mml:mo>)</mml:mo><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>as intrinsic of the relaxor state rather than due to defect relaxation

High-temperature memory in(Pb∕La)(Zr∕Ti)O3as intrinsic of the relaxor state rather than due to defect relaxation