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Time-resolved Kerr rotation spectroscopy as a function of pump-probedistance, voltage and magnetic field is used to measure the momentum-dependentspin splitting energies in GaAs and InGaAs epilayers. The strain of the samplescan be reproducibly controlled in the cryostat using three- and four-pointbending applied with a mechanical vise. We find that the magnitude of the spinsplitting increases linearly with applied tension and voltage. A strain-driftdiffusion model is used to relate the magnitude of the measured spin-orbitsplitting to the amount of strain in the sample.Comment: 4 pages, 5 figure

physical review. b, condensed matter and materials physics

Mechanical control of spin-orbit splitting in GaAs and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">In</mml:mi><mml:mn>0.04</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>0.96</mml:mn></mml:msub><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>epilayers

Mechanical control of spin-orbit splitting in GaAs andIn0.04Ga0.96Asepilayers