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We observe that an in-plane magnetic field ($B_{||}$) can induce an order ofmagnitude enhancement in the low temperature ($T$) resistivity ($\rho$) ofmetallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show thefirst observation of saturating behavior of $\rho(B_{||})$ at high $B_{||}$ inGaAs system, which suggests our large positive $\rho(B_{||})$ is due to thespin polarization effect alone. We find that this tenfold increase in$\rho(B_{||})$ even persists deeply into the 2D metallic state with the high$B_{||}$ saturating values of $\rho$ lower than 0.1$\times$h/e$^2$. Thedramatic effect of $B_{||}$ we observe on the highly conductive 2D holes (with$B$=0 conductivity as high as 75e$^2$/h) sets strong constraint on models forthe spin dependent transport in dilute metallic 2D systems.Comment: published, typos correcte

physical review. b, condensed matter and materials physics

Spin-polarization-induced tenfold magnetoresistivity of highly metallic two-dimensional holes in a narrow<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaAs</mml:mi></mml:mrow></mml:math>quantum well

Spin-polarization-induced tenfold magnetoresistivity of highly metallic two-dimensional holes in a narrowGaAsquantum well