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We have calculated electronic and optical properties ofSi/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$tight-binding method. Tight-binding parameters and band bowing ofBeSe$_{0.41}$Te$_{0.59}$ are considered through a recent model for highlymismatched semiconductor alloys. The band bowing and the measurements ofconduction band offset lead to a type II heterostucture forSi/BeSe$_{0.41}$Te$_{0.59}$ with conduction band minimum in the Si layer andvalence band maximum in the BeSe$_{0.41}$Te$_{0.59}$ layer. The electronicstructure and optical properties of various (Si$_{2})_{n}$/(BeSe$_{0.41}$Te$_{0.59})_{m}$ [001] superlattices have been considered. Twobands of interface states were found within the bandgap of bulk Si. Ourcalculations indicate that the optical edges are below the fundamental bandgapof bulk Si and the transitions are optically allowed.Comment: 16 pager, 7 figure

Electronic and optical properties of beryllium chalcogenide/silicon heterostructures