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The investigation of small size embedded nanostructures, by a combination ofcomplementary anomalous diffraction techniques, is reported. GaN Quantum Dots(QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode,are studied in terms of strain and local environment, as a function of the AlNcap layer thickness, by means of grazing incidence anomalous diffraction. Thatis, the X-ray photons energy is tuned across the Ga absorption K-edge whichmakes diffraction chemically selective. Measurement of \textit{hkl}-scans,close to the AlN (30-30) Bragg reflection, at several energies across the GaK-edge, allows the extraction of the Ga partial structure factor, from whichthe in-plane strain of GaN QDs is deduced. From the fixed-Q energy-dependentdiffracted intensity spectra, measured for diffraction-selected iso-strainregions corresponding to the average in-plane strain state of the QDs,quantitative information regarding composition and the out-of-plane strain hasbeen obtained. We recover the in-plane and out-of-plane strains in the dots.The comparison to the biaxial elastic strain in a pseudomorphic layer indicatesa tendency to an over-strained regime.Comment: submitted to PR

physical review. b, condensed matter and materials physics

Step-by-step capping and strain state of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaN</mml:mi><mml:mo>∕</mml:mo><mml:mi>AlN</mml:mi></mml:mrow></mml:math>quantum dots studied by grazing-incidence diffraction anomalous fine structure

Step-by-step capping and strain state ofGaN∕AlNquantum dots studied by grazing-incidence diffraction anomalous fine structure