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The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.

physical review b

Tunnel spin polarization of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ni</mml:mi><mml:mn>80</mml:mn></mml:msub><mml:msub><mml:mi>Fe</mml:mi><mml:mn>20</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>probed with a magnetic tunnel transistor

Tunnel spin polarization ofNi80Fe20∕SiO2probed with a magnetic tunnel transistor