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We present a detailed discussion of extraordinary optoconductance (EOC).Experimental data was acquired via macroscopic metal-semiconductor hybridstructures composed of GaAs and In and subjected to illumination from an Ar ionlaser. A drift diffusion model using the finite element method (FEM) provided areasonable fit to the data. EOC is explored as a function of laser position,bias current, laser power density, and temperature. The positional dependenceof the voltage is accounted for by the Dember effect, with the modelincorporating the excess hole distribution based on the carrier mobility, andthus the mean free path. The bias current is found to produce a linear voltageoffset and does not influence the EOC. A linear relationship is found betweenthe laser power density and the voltage in the bare and hybrid devices. Thisdependence is reproduced in the model by a generation rate parameter which isrelated to the power density. Incorporating the mobility and diffusiontemperature dependence, the model directly parallels the temperature dependenceof the EOC without the use of fitting parameters.Comment: 8 Pages, 7 figures; More detailed title, typos fixed, figures fixe

physical review. b, condensed matter and materials physics

Experimental measurement and finite-element modeling of extraordinary optoconductance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaAs</mml:mi><mml:mtext>−</mml:mtext><mml:mi>In</mml:mi></mml:mrow></mml:math>metal-semiconductor hybrid structures

Experimental measurement and finite-element modeling of extraordinary optoconductance inGaAs−Inmetal-semiconductor hybrid structures