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A one dimensional theory of lateral spin-polarized transport is derived fromthe two dimensional flow in the vertical cross section of a stack offerromagnetic and paramagnetic layers. This takes into account the influence ofthe lead on the lateral current underneath, in contrast to the conventional 1Dmodeling by the collinear configuration of lead/channel/lead. Our theory isconvenient and appropriate for the current in plane configuration of anall-metallic spintronics structure as well as for the planar structure of asemiconductor with ferromagnetic contacts. For both systems we predict theoptimal contact width for maximal magnetoresistance and propose an electricalmeasurement of the spin diffusion length for a wide range of materials.Comment: 4 pages, 3 figure

Lateral diffusive spin transport in layered structures