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We present a systematic study of the exciton/electron-hole plasmaphotoluminescence dynamics in bulk GaAs for various lattice temperatures andexcitation densities. The competition between the exciton and electron-holepair recombination dominates the onset of the luminescence. We show that themetal-to-insulator transition, induced by temperature and/or excitationdensity, can be directly monitored by the carrier dynamics and thetime-resolved spectral characteristics of the light emission. The dependence oncarrier density of the photoluminescence rise time is strongly modified arounda lattice temperature of 49 K, corresponding to the exciton binding energy (4.2meV). In a similar way, the rise-time dependence on lattice temperatureundergoes a relatively abrupt change at an excitation density of 120-180x10^15cm^-3, which is about five times greater than the calculated Mott density inGaAs taking into account many body corrections.Comment: 15 pages, 7 figures, submitted to Phys. Rev.

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs