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The spin polarization of the electron current in ap-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in alight-emitting diode, has been studied theoretically. A series ofself-consistent simulations determines the charge distribution, the bandbending, and the current-voltage characteristics for the entire structure. Anempirical tight-binding model, together with the Landauer- Buttiker theory ofcoherent transport has been developed to study the current spin polarization.This dual approach allows to explain the experimentally observed high magnitudeand strong bias dependence of the current spin polarization.Comment: Submitted to Phys. Rev. B Rapid Communication

physical review. b, condensed matter and materials physics

Voltage-controlled spin injection in a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mo>,</mml:mo><mml:mi mathvariant="normal">Mn</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">Al</mml:mi><mml:mo>,</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:mi …

Voltage-controlled spin injection in a(Ga,Mn)As∕(Al,Ga)