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We present a theory for the memory effect in electron glasses. In fast gatevoltage sweeps it is manifested as a dip in the conductivity around theequilibration gate voltage. We show that this feature, also known as anomalousfield effect, arises from the long-time persistence of correlations in theelectronic configuration. We argue that the gate voltage at which the memorydip saturates is related to an instability caused by the injection of acritical number of excess carriers. This saturation threshold naturallyincreases with temperature. On the other hand, we argue that the gate voltagebeyond which memory is erased, is temperature independent. Using standardpercolation arguments, we calculate the anomalous field effect as a function ofgate voltage, temperature, carrier density and disorder. Our results areconsistent with experiments, and in particular, they reproduce the observedscaling of the width of the memory dip with various parameters.Comment: Accepted version, to be published in PR

Memory effect in electron glasses: Theoretical analysis via a percolation approach