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The screening of point charges in hydrogenated Si quantum dots ranging indiameter from 10 A to 26 A has been studied using first-principlesdensity-functional methods. We find that the main contribution to the screeningfunction originates from the electrostatic field set up by the polarizationcharges at the surface of the nanocrystals. This contribution is well describedby a classical electrostatics model of dielectric screening

Screening of point charges in Si quantum dots